39th IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD 2027)

The 39th IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD 2027) presents advances in power semiconductor devices, materials, integration, and circuit technologies for high- and low-voltage applications.

Key Topics

• High-voltage silicon power devices
• Low-voltage power devices and power IC technologies
• Power IC circuit design and demonstration platforms
• GaN and nitride-based compound semiconductor devices
• SiC, Ga2O3, diamond, and emerging wide-bandgap materials
• Module integration and advanced packaging technologies

Who should Attend

• Power semiconductor device researchers
• Power electronics and IC design engineers
• Materials scientists and process technologists
• Packaging and module integration specialists
• Industry professionals in power electronics manufacturing
• Academic researchers and graduate students in semiconductor technologies