The International Silicon-Germanium Technology and Device Meeting (ISTDM) 2012 is dedicated to the latest results in technology, device physics, applications and circuits.
The International Silicon-Germanium Technology and Device Meeting (ISTDM) 2012 covers topics such as:
- Process Technology
epitaxy, Cleaning, dopant diffusion, gate dielectrics on SiGe/Ge, contact technology, etching, TCAD and process integration - Materials
strain engineering and Wafer substrate fabrication - Circuits/Applications
analog/mixed signal, Digital logic, imaging, wireless and fiber optic interfaces, novel applications and sensing - Devices
MODFETs, Mobility enhanced MOSFETs, tunnel FETs, HBTs, IR devices, optoelectronic devices, quantum devices, solar cells, thermoelectric devices, MEMS and device modeling
