The International Silicon-Germanium Technology and Device Meeting (ISTDM) 2012 is dedicated to the latest results in technology, device physics, applications and circuits.
Key Topics
Process Technology epitaxy, Cleaning, dopant diffusion, gate dielectrics on SiGe/Ge, contact technology, etching, TCAD and process integration
Materials strain engineering and Wafer substrate fabrication
Circuits/Applications analog/mixed signal, Digital logic, imaging, wireless and fiber optic interfaces, novel applications and sensing
Devices MODFETs, Mobility enhanced MOSFETs, tunnel FETs, HBTs, IR devices, optoelectronic devices, quantum devices, solar cells, thermoelectric devices, MEMS and device modeling
Past Events
International Silicon-Germanium Technology and Device Meeting (ISTDM) 2012 - 04-06 Jun 2012, Hotel Shattuck Plaza, Berkeley, California, United States (27129)
International Silicon-Germanium Technology and Device Meeting (ISTDM) 2026
Important
Please, check "International Silicon-Germanium Technology and Device Meeting (ISTDM)" official website for possible changes, before making any traveling arrangements
