The IWDTF2011 will focus on the science and technologies of gate dielectric films for MOS and memory devices, such as ultrathin SiO2, SiON, high-k gate dielectrics, and ferroelectric films. The topics on other technologies involved in the advanced gate stacks, including metal gate electrodes and high-mobility channel materials, will also be discussed.
Past Events
International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF) 2011 - 20-21 Jan 2011, Tokyo Institute of Technology, Japan (8568)
International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF) 2026
Important
Please, check "International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF)" official website for possible changes, before making any traveling arrangements
